Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-03-11
2010-11-30
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE27121, C257SE21526, C438S004000, C438S034000
Reexamination Certificate
active
07842953
ABSTRACT:
A pixel structure disposed on a substrate and including a common line, a reserved line, a dielectric layer, two repair lines, an active device, and a pixel electrode is provided. The reserved line and the common line are disposed on the substrate and are covered by the dielectric layer. The repair lines are disposed on the dielectric layer, and each repair line has a first repairing region overlapped with the common line and a second repairing region overlapped with the reserved line. When the common line is open, the repair lines in the first and second repairing regions are connected with the common line and the reserved line, such that the common line, the repair lines, and the reserved line are electrically connected. After the common line, the repair lines, and the reserved line are connected, the above-mentioned pixel structure is effectively repaired.
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Au Optronics Corporation
Ho Tu-Tu V
Jianq Chyun IP Office
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