Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2009-11-05
2010-11-16
Lee, Calvin (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C438S210000
Reexamination Certificate
active
07834361
ABSTRACT:
A method for manufacturing a pixel structure is provided. First, a first mask process is performed to form a patterned first metal layer on a substrate, wherein the patterned first metal layer includes a gate. Next, a second mask process is performed to form a patterned insulating layer and a patterned semiconductor layer over the gate, wherein the patterned insulating layer is disposed on the patterned first metal layer, and the patterned semiconductor layer is disposed on the patterned insulating layer. Then, a third mask process is performed to define a thin film transistor (TFT) and a pixel electrode connected thereto and to form a passivation layer to cover the TFT.
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patent: 6818923 (2004-11-01), Kim et al.
patent: 6838696 (2005-01-01), Kobayashi et al.
patent: 7001796 (2006-02-01), Cho et al.
patent: 2009/0108280 (2009-04-01), Jan et al.
patent: 1632675 (2005-06-01), None
Office Action of Jun. 30, 2010 for Parent U.S. Appl. No. 12/076,681.
Chen Chien-Hung
Lin Han-Tu
AU Optronics
Bacon & Thomas PLLC
Lee Calvin
LandOfFree
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