Pixel structure and method for fabricating the same

Details Pixel structure and method for fabricating the same Pixel structure and method for fabricating the same

2011-04-19

2011-04-19

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

C257S081000, C257S091000, C257S093000, C257S098000, C257S435000, C257SE27131, C345S092000, C349S084000

Reexamination Certificate

active

07928450

ABSTRACT:
A pixel structure is disclosed. The pixel structure includes a substrate, a first data line having at least one end formed on the substrate, a first insulation layer overlying the first data line and exposing a part of the end of the first data line, a shielding electrode disposed on the first insulation layer and overlapped with the first data line, a second data line formed on the first insulation layer and electrically connected to the exposed end of the first data line, a second insulation layer overlying the shielding electrode and the second data line, and a pixel electrode formed on the second insulation layer and overlapped with the shielding electrode. The invention also provides a method for fabricating the pixel structure.

REFERENCES:
patent: 5459596 (1995-10-01), Ueda et al.
patent: 5600461 (1997-02-01), Ueda et al.
patent: 5604358 (1997-02-01), Kim
patent: 6750836 (2004-06-01), Katayama et al.
patent: 2007/0170504 (2007-07-01), Chang
patent: 5203994 (1993-08-01), None
CN Office Action mailed Feb. 1, 2008.

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