Pixel structure and manufacturing method thereof

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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Details

C438S149000, C438S161000, C257S059000, C257S072000, C257SE27130, C257SE33001

Reexamination Certificate

active

07951629

ABSTRACT:
A method of manufacturing a pixel structure is provided. A first patterned conductive layer including a gate and a data line is formed on a substrate. A gate insulating layer is formed to cover the first patterned conductive layer and a semiconductor channel layer is formed on the gate insulating layer above the gate. A second patterned conductive layer including a scan line, a common line, a source and a drain is formed on the gate insulating layer and the semiconductor channel layer. The scan line is connected to the gate and the common line is located above the data line. The source and drain are located on the semiconductor channel layer, and the source is connected to the data line. A passivation layer is formed on the substrate to cover the second patterned conductive layer. A pixel electrode connected to the drain is formed on the passivation layer.

REFERENCES:
patent: 7338846 (2008-03-01), Su et al.
patent: 2007/0236625 (2007-10-01), Wang et al.
patent: 2008/0064150 (2008-03-01), Liou et al.
patent: 2008/0111138 (2008-05-01), Lin et al.
patent: 2008/0128700 (2008-06-01), Su et al.

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