Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-01-18
2011-01-18
Smith, Matthew S (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE27130, C257SE33001, C438S030000, C438S149000, C438S151000
Reexamination Certificate
active
07872262
ABSTRACT:
A method of manufacturing a pixel structure is provided. A first patterned conductive layer including a gate and a data line is formed on a substrate. A gate insulating layer is formed to cover the first patterned conductive layer and a semiconductor channel layer is formed on the gate insulating layer above the gate. A second patterned conductive layer including a scan line, a common line, a source and a drain is formed on the gate insulating layer and the semiconductor channel layer. The scan line is connected to the gate and the common line is located above the data line. The source and drain are located on the semiconductor channel layer, and the source is connected to the data line. A passivation layer is formed on the substrate to cover the second patterned conductive layer. A pixel electrode connected to the drain is formed on the passivation layer.
REFERENCES:
patent: 7338846 (2008-03-01), Su et al.
patent: 2007/0236625 (2007-10-01), Wang et al.
patent: 2008/0064150 (2008-03-01), Liou et al.
patent: 2008/0111138 (2008-05-01), Lin et al.
patent: 2008/0128700 (2008-06-01), Su et al.
Lin Hsiang-Lin
Liu Sung-Kao
Au Optronics Corporation
Jianq Chyun IP Office
Parker John M
Smith Matthew S
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