Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-03-26
2011-10-04
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C349S043000, C349S187000, C438S030000, C438S149000, C438S029000, C438S022000, C438S151000
Reexamination Certificate
active
08030652
ABSTRACT:
A pixel structure and a fabrication method thereof are provided. A substrate with a light-shielding layer and a flat layer formed thereon is provided. A first photomask process is conducted to pattern a first metal layer and a semiconductor layer for forming a source, a drain, a channel layer, a data line and a first pad. A second photomask process is conducted to pattern the protection layer, the second metal layer and the gate dielectric layer for forming a gate, a scan line and a second pad, and a part of the drain is exposed. A third photomask process is conducted to pattern a transparent conductive layer for forming a pixel electrode.
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Chen Shih-Chin
Shih Ming-Hung
Au Optronics Corporation
Jianq Chyun IP Office
Nguyen Ha Tran T
Pathak Shantanu C
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