Pixel structure and fabricating method thereof

Details Pixel structure and fabricating method thereof Pixel structure and fabricating method thereof

2007-02-16

2008-10-21

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257SE31126

Reexamination Certificate

active

07439541

ABSTRACT:
A pixel structure including a substrate, a gate, a patterned dielectric layer, a semiconductor layer, a source, a drain and a reflective pixel electrode is provided. The gate is disposed on the substrate, whereon the patterned dielectric layer is disposed to cover the gate. The patterned dielectric layer has a plurality of bumps and at least one opening; the bumps are disposed on the substrate exposed by the opening and the semiconductor layer is disposed on the patterned dielectric layer above the gate. The source and the drain are disposed on the semiconductor layer. The reflective pixel electrode is disposed on the patterned dielectric layer to cover the bumps and electrically connected with the drain. Hence, the pixel structure can achieve better reliability.

REFERENCES:
patent: 5510918 (1996-04-01), Matsunaga et al.
patent: 6433842 (2002-08-01), Kaneko et al.

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