Pixel structure and fabricating method thereof

Details Pixel structure and fabricating method thereof Pixel structure and fabricating method thereof

2006-08-01

2006-08-01

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S079000, C257S059000, C438S030000

Reexamination Certificate

active

07084430

ABSTRACT:
A method of fabricating a pixel structure is provided. A gate, an insulation layer, and a channel layer are sequentially formed over the substrate. A pair of source/drain terminals are formed over the channel layer, consisting a thin film transistor on the substrate. A passivation layer is formed over the thin film transistor. A photoresist layer is formed over the passivation layer. Using the gate, the source/drain terminals as a mask, a back exposure and a photoresist development process are performed to pattern the photoresist layer. Using the patterned photoresist layer as a mask, the passivation layer and the insulation layer are etched to expose a sidewall of the drain terminal. The photoresist layer is removed. A pixel electrode is formed over the passivation layer such that the pixel electrode and the drain terminal are electrically connected through the sidewall of the drain terminal.

REFERENCES:
patent: 6232158 (2001-05-01), Lee
patent: 6307602 (2001-10-01), Song
patent: 6346730 (2002-02-01), Kitakado et al.
patent: 6372560 (2002-04-01), Jen et al.
patent: 6683668 (2004-01-01), Moon et al.
patent: 10-115842 (1998-05-01), None

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