Pixel structure and fabricating method thereof

Details Pixel structure and fabricating method thereof Pixel structure and fabricating method thereof

2006-02-14

2006-02-14

Schechter, Andrew (Department: 2871)

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

C349S039000, C349S054000, C349S192000

Reexamination Certificate

active

06999135

ABSTRACT:
A pixel structure and a fabricating method thereof are described. The method comprises forming a conductive layer, a data line and a source/drain at the same time. The conductive layer has a coupling portion and a connecting portion. The coupling portion is used as a top electrode of a pixel storage capacitor, and the connecting portion connects the coupling portion and the drain. Thereafter, a contact window is defined on the connecting portion, and a pixel electrode formed subsequently can be electrically connected to the connecting portion through the contact window. Thus, the pixel electrode, the conductive layer (includes the coupling portion) and the drain are electrically connected each other. Since the contact window is not formed above the pixel storage capacitor, the leakage of the pixel storage capacitor will not occur when the etching process of the contact window etches away the gate insulating layer.

REFERENCES:
patent: 5173792 (1992-12-01), Matsueda
patent: 2001/0052889 (2001-12-01), Fukunishi
patent: 2003/0030768 (2003-02-01), Sakamoto et al.

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