Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-04-11
2006-04-11
Richards, N. Drew (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000
Reexamination Certificate
active
07026648
ABSTRACT:
A pixel structure is provided. The pixel structure comprises a scan line, a data line, a pixel electrode and a thin film transistor. The data line branches out into a plurality of subsidiary lines in the area above the scan line. If there is a short circuit between the scan line and the data line, the short circuit can be repaired by cutting the connections to one of the branching subsidiary lines. In one embodiment of this invention, a repair line is set up on one side of the data line such that a portion of the repair line crosses over the scan line. If there is a short circuit between the scan line and the data line, a laser repair operation can be carried out through the repair line.
REFERENCES:
patent: 5877512 (1999-03-01), Kim
patent: 6429909 (2002-08-01), Kim et al.
patent: 06102536 (1994-04-01), None
Au Optronics Corporation
Jianq Chyun IP Office
Richards N. Drew
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