Pixel structure

Details Pixel structure Pixel structure

2011-04-26

2011-04-26

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S048000, C257S043000, C257S072000, C257S066000, C257SE23001, C257SE29320, C257SE27132, C257SE29117, C257SE33053

Reexamination Certificate

active

07932519

ABSTRACT:
A pixel structure includes a scan line, a data line, a gate electrode, a semiconductor layer, a source electrode, a drain electrode including a comb-shaped part surrounding the source electrode and a connecting part, and a pixel electrode electrically connected to the drain electrode. The scan line and the data line are arranged intersectedly and electrically insulated from each other. At least a portion of the source electrode and the drain electrode are disposed on the semiconductor layer. At least one branch of the comb-shaped part extends outside one side of the gate electrode to form a protrusion part. The connecting part extends from the comb-shaped part beyond the other side of the gate electrode. The protrusion part and the connecting part aligned with the margin of the gate electrode have a first width and a third width respectively, wherein the first width substantially equals to the third width.

REFERENCES:
patent: 5097297 (1992-03-01), Nakazawa
patent: 2010/0026669 (2010-02-01), Lee et al.
patent: 2010/0066935 (2010-03-01), Mori
patent: CN201000520 (2008-01-01), None
patent: CN101359692 (2009-02-01), None

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