Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2010-03-17
2010-12-21
Pham, Hoai v (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE29117
Reexamination Certificate
active
07855382
ABSTRACT:
A pixel structure including a gate, a gate dielectric layer, a patterned semiconductor layer having a channel area disposed above the gate, a patterned dielectric layer having an etching-stop layer disposed above the gate and a number of bumps, a patterned metal layer having a reflective pixel electrode, a source and a drain, an overcoat dielectric layer, and a transparent pixel electrode sequentially disposed on a substrate is provided. The source and the drain respectively cover portions of the channel area. The reflective pixel electrode connects the drain and covers the bumps to form an uneven surface. The overcoat dielectric layer disposed on a transistor constituted by the gate, the gate dielectric layer, the patterned semiconductor layer, the source and the drain has a contact opening exposing a portion of the reflective pixel electrode. The transparent pixel electrode is electrically connected to the reflective pixel electrode through the contact opening.
REFERENCES:
patent: 7276731 (2007-10-01), Jeong et al.
Lin Hsiang-Lin
Tsao Chun-Chieh
Au Optronics Corporation
Jianq Chyun IP Office
Pham Hoai v
LandOfFree
Pixel structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Pixel structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pixel structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4217848