Pixel sensors using nonlinear capacitance with logarithmic...

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

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C250S208100

Reexamination Certificate

active

07573017

ABSTRACT:
Disclosed herein is an active pixel sensor having a first transistor amplifying voltage generated in response to light at an integration node; a second transistor selects a specific pixel from a pixel array; a third transistor resets voltage of the integration node to voltage supplied from VDD during a reset period; a fourth transistor connects a photogate capacitance to the integration node increasing a dynamic range when the voltage of the integration node is VDD-Vth; a fifth transistor generates a signal voltage in a logarithmic response to light when the voltage of the integration node is logarithmic bias voltage-Vth; and a photodiode to convert photons into electron pairs in a depletion layer, causing signal charges to be accumulated when light is incident from outside.

REFERENCES:
patent: 6054704 (2000-04-01), Pritchard et al.
patent: 6654057 (2003-11-01), Rhodes
patent: 2008/0070341 (2008-03-01), Yuzurihara
patent: 2008/0266434 (2008-10-01), Sugawa et al.
GG. Storm, J.E.D. Hurwitz, D. Rensaw, K.M. Findlater, R.K. Henderson, and M.D. Purcell, “Combined Linear-Logarithmic CMOS Image Sensor,” 2004 IEEE International Solid-State Circuits Conference, Jun. 2004.
Sungsik Lee, and Kyounghoon Yang, “High Dynamic-Range CMOS Image Sensor Cell Based on Self-Adaptive Photosensing Operation,” IEEE Transactions On Electron Devices, vol. 53, pp. 1733-1735, Jul. 2006.

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