Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2011-04-12
2011-04-12
Brewster, William M. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S292000, C257S444000
Reexamination Certificate
active
07923750
ABSTRACT:
A pixel sensor cell, a method for fabricating or operating the pixel sensor cell and a design structure for fabricating the pixel sensor cell each include a semiconductor substrate that includes a photoactive region separated from a floating diffusion region by a channel region. At least one gate dielectric is located upon the semiconductor substrate at least in-part interposed between the photoactive region and the floating diffusion region, and at least one optically transparent gate is located upon the gate dielectric and at least in-part over the channel region. Preferably, the at least one gate dielectric is also located over the photoactive region and the at least one optically transparent gate is also located at least in-part over the photoactive region, to provide enhanced charge transfer capabilities within the pixel sensor cell, which is typically a CMOS pixel sensor cell.
REFERENCES:
patent: 4807004 (1989-02-01), Wan et al.
patent: 5365092 (1994-11-01), Janesick
patent: 5798542 (1998-08-01), Anagnostopoulos et al.
patent: 5804845 (1998-09-01), Anagnostopoulos et al.
patent: 5891752 (1999-04-01), Losee
patent: 2002/0109157 (2002-08-01), Rhodes
patent: 2006/0187327 (2006-08-01), Mabuchi et al.
patent: 2008/0022250 (2008-01-01), Nagarajan et al.
Adkisson James William
Ellis-Monaghan John Joseph
Krishnasamy Rajendran
Mulugeta Solomon
Musante Charles Francis
Brewster William M.
Canale Anthony
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
LandOfFree
Pixel sensor cell, methods and design structure including... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Pixel sensor cell, methods and design structure including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pixel sensor cell, methods and design structure including... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2664551