Pixel performance improvement by use of a field-shield

Details Pixel performance improvement by use of a field-shield Pixel performance improvement by use of a field-shield

2011-08-02

2011-08-02

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S040000, C257S072000

Reexamination Certificate

active

07989806

ABSTRACT:
A pixel cell (100) and method for making the same for an active matrix display includes a pixel pad (110) and a thin film field effect transistor (106) which selectably couples a signal to activate/deactivate the pixel pad. A field shield (112) is formed on an insulating layer (102) and connected to the pixel pad through the insulating layer such that the field shield extends over at least a portion of the pixel pad. The field shield may extend over the thin film transistor and form a second gate (215) used to enhance the performance of the thin film transistor and the pixel cell.

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