Pixel having an oxide layer with step region

Details Pixel having an oxide layer with step region Pixel having an oxide layer with step region

2007-12-25

2007-12-25

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S184000, C257S225000, C257S231000, C257S257000, C257S290000, C257S461000, C257SE31058, C257SE27133

Reexamination Certificate

active

11350298

ABSTRACT:
A semiconductor structure, having a doped well region being formed in a substrate layer and a transistor having a terminal provided within said doped well region. The semiconductor structure also includes an oxide layer formed over the substrate layer, the doped well region, a poly silicon region, and the terminal of the transistor. The oxide layer including a step region being located where a height of the oxide layer transitions from a height associated with the doped well region to a height associated with the terminal of the transistor.

REFERENCES:
patent: 6177293 (2001-01-01), Netzer et al.
patent: 6232626 (2001-05-01), Rhodes
patent: 6350663 (2002-02-01), Kopley et al.
patent: 6521926 (2003-02-01), Sasaki

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