Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1998-01-14
1999-11-09
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257464, 257566, H01L 3100
Patent
active
059820128
ABSTRACT:
The present invention relates to a pixel cell and pixel cell array modified to improve performance. One improvement taught by the present invention is implantation of dopant into the silicon to form the base region after formation of polysilicon, resulting in highest base dopant concentrations lying at the thin oxide and emitter interfaces. A second improvement taught by the present invention is a reduction in the size of the heavily doped portion of the emitter to extend no further than the footprint of the emitter contact, thereby inhibiting leakage between the emitter and adjacent polysilicon. A third improvement taught by the present invention is electronic isolation of pixel cells by inter-pixel regions doped with conductivity-altering impurity of a type opposite that of the base rather than by field oxides, thereby eliminating leakage at the field oxide edge. A fourth improvement disclosed by the present invention is the introduction of silicides at the emitter contact and the base capacitor contact in order to reduce contact resistance.
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Foveon, Inc.
Monin, Jr. Donald L.
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