Pixel cell isolation of charge storage and floating...

Details Pixel cell isolation of charge storage and floating... Pixel cell isolation of charge storage and floating...

2006-04-07

2009-10-20

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S080000, C257S082000, C257S083000, C257S084000, C257S113000, C257S114000, C257S115000, C257S116000, C257S117000, C257S118000, C257S290000, C257S291000, C257S292000, C257S293000, C257S294000, C257S463000, C257SE27133

Reexamination Certificate

active

07605440

ABSTRACT:
A pixel having a well-isolated charge storage region or floating diffusion region may be obtained by providing a separate P-well around the storage region or floating diffusion region. In one embodiment, a separate P-well entirely encases the storage region and is in contact with the storage region. This P-well provides an electrical barrier for preventing electrons that are generated elsewhere in the pixel from contaminating the storage region. In another embodiment, a first separate P-well encases and is in contact with the storage region and a second separate P-well encases and is in contact with the floating diffusion region.

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