Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-07-19
2011-07-19
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C438S034000, C438S586000, C257S347000, C257SE33053, C257SE27112, C257SE29043, C345S087000, C345S088000, C345S089000, C345S090000, C345S091000, C349S037000, C349S048000, C349S143000, C349S187000
Reexamination Certificate
active
07982219
ABSTRACT:
A pixel array includes scan lines, data lines, and pixels. Each pixel arranged in the nthrow includes a first sub-pixel, a second sub-pixel, and a third sub-pixel. In the first sub-pixel, a first gate and a first drain of a first transistor are connected to the (n−1)thscan line and a first pixel electrode, respectively. In the second sub-pixel, a second gate of a second transistor is connected to the nthscan line, and a second drain is connected to a second pixel electrode and a first source of the first transistor. In the third sub-pixel, a third gate of a third transistor is connected to the (n+1)thscan line, a third drain is connected to a third pixel electrode and a second source of the second transistor, and a third source is connected to one of the data lines.
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Kuo Jing-Tin
Lee Kuo-Hsien
Au Optronics Corporation
Jianq Chyun IP Office
Richards N Drew
Singal Ankush k
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