Piso electrostatic discharge protection device

Electricity: electrical systems and devices – Safety and protection of systems and devices – With specific current responsive fault sensor

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357 13, 357 20, 357 35, 357 86, 361 91, H01L 2990, H01L 2906, H01L 2972

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active

051384132

ABSTRACT:
A semiconductor protection circuit comprises a semiconductor substrate of a first conductivity type; a first region of the first conductivity type formed in the substrate at a surface thereof and having a relatively different degree of conductivity from the substrate; a region of a second conductivity type formed in the first region of the first conductivity type; and a second region of the first conductivity type formed partly in each of the semiconductor substrate and the first region of the first conductivity type so as to bridge a junction therebetween.

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Yean-Shan Hu, et al., "High Density Input Protection Circuit Design In 1.2 um CMOS Technology" 1987 EOS/ESD Symposium Proceedings, pp. 179-185.
McPhee, R. A., et al. "Thick Oxide Device ESD Performance Under Process Variations", 1986 EOS/ESD Symposium Proceedings, pp. 173-181.

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