Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2008-07-08
2008-07-08
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S001000, C257S003000, C257S004000, C257S005000, C438S800000, C438S900000
Reexamination Certificate
active
07397060
ABSTRACT:
A memory cell device includes a bottom electrode, pipe shaped member comprising phase change material and a top electrode in contact with the pipe-shaped member. An electrically and thermally insulating material is inside the pipe-shaped member. An integrated circuit including an array of pipe-shaped phase change memory cells is described.
REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 3530441 (1970-09-01), Ovshinsky
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 4719594 (1988-01-01), Young et al.
patent: 4876220 (1989-10-01), Mohsen et al.
patent: 5166096 (1992-11-01), Cote et al.
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 5177567 (1993-01-01), Klersy et al.
patent: 5534712 (1996-07-01), Ovshinsky et al.
patent: 5687112 (1997-11-01), Ovshinsky
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5789758 (1998-08-01), Reinberg
patent: 5814527 (1998-09-01), Wolstenholme et al.
patent: 5831276 (1998-11-01), Gonzalez et al.
patent: 5837564 (1998-11-01), Sandhu et al.
patent: 5869843 (1999-02-01), Harshfield
patent: 5879955 (1999-03-01), Gonzalez et al.
patent: 5920788 (1999-07-01), Reinberg
patent: 5952671 (1999-09-01), Reinberg et al.
patent: 5958358 (1999-09-01), Tenne et al.
patent: 5970336 (1999-10-01), Wolstenholme et al.
patent: 5985698 (1999-11-01), Gonzalez et al.
patent: 5998244 (1999-12-01), Wolstenholme et al.
patent: 6011725 (2000-01-01), Eitan
patent: 6025220 (2000-02-01), Sandhu
patent: 6031287 (2000-02-01), Harshfield
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6077729 (2000-06-01), Harshfield
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6104038 (2000-08-01), Gonzalez et al.
patent: 6111264 (2000-08-01), Wolstenholme et al.
patent: 6114713 (2000-09-01), Zahorik
patent: 6117720 (2000-09-01), Harshfield
patent: 6147395 (2000-11-01), Gilgen
patent: 6150253 (2000-11-01), Doan et al.
patent: 6153890 (2000-11-01), Wolstenholme et al.
patent: 6177317 (2001-01-01), Huang et al.
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6189582 (2001-02-01), Reinberg et al.
patent: 6236059 (2001-05-01), Wolstenholme et al.
patent: RE37259 (2001-07-01), Ovshinsky
patent: 6271090 (2001-08-01), Huang et al.
patent: 6280684 (2001-08-01), Yamada et al.
patent: 6287887 (2001-09-01), Gilgen
patent: 6314014 (2001-11-01), Lowrey et al.
patent: 6320786 (2001-11-01), Chang et al.
patent: 6339544 (2002-01-01), Chiang et al.
patent: 6351406 (2002-02-01), Johnson et al.
patent: 6420215 (2002-07-01), Knall et al.
patent: 6420216 (2002-07-01), Clevenger et al.
patent: 6420725 (2002-07-01), Harshfield
patent: 6423621 (2002-07-01), Doan et al.
patent: 6429064 (2002-08-01), Wicker
patent: 6462353 (2002-10-01), Gilgen
patent: 6483736 (2002-11-01), Johnson et al.
patent: 6487114 (2002-11-01), Jong et al.
patent: 6501111 (2002-12-01), Lowrey
patent: 6511867 (2003-01-01), Lowrey et al.
patent: 6512241 (2003-01-01), Lai
patent: 6514788 (2003-02-01), Quinn
patent: 6534781 (2003-03-01), Dennison
patent: 6545903 (2003-04-01), Wu
patent: 6555860 (2003-04-01), Lowrey et al.
patent: 6563156 (2003-05-01), Harshfield
patent: 6566700 (2003-05-01), Xu
patent: 6567293 (2003-05-01), Lowrey et al.
patent: 6579760 (2003-06-01), Lung
patent: 6586761 (2003-07-01), Lowrey
patent: 6589714 (2003-07-01), Maimon et al.
patent: 6593176 (2003-07-01), Dennison
patent: 6597009 (2003-07-01), Wicker
patent: 6605527 (2003-08-01), Dennison et al.
patent: 6605821 (2003-08-01), Lee et al.
patent: 6607974 (2003-08-01), Harshfield
patent: 6613604 (2003-09-01), Maimon et al.
patent: 6617192 (2003-09-01), Lowrey et al.
patent: 6621095 (2003-09-01), Chiang et al.
patent: 6627530 (2003-09-01), Li et al.
patent: 6639849 (2003-10-01), Takahashi et al.
patent: 6673700 (2004-01-01), Dennison et al.
patent: 6744088 (2004-06-01), Dennison
patent: 6791102 (2004-09-01), Johnson et al.
patent: 6797979 (2004-09-01), Chiang et al.
patent: 6800563 (2004-10-01), Xu
patent: 6815704 (2004-11-01), Chen
patent: 6861267 (2005-03-01), Xu et al.
patent: 6864500 (2005-03-01), Gilton
patent: 6864503 (2005-03-01), Lung
patent: 6867638 (2005-03-01), Saiki et al.
patent: 6888750 (2005-05-01), Walker et al.
patent: 6894305 (2005-05-01), Yi et al.
patent: 6927410 (2005-08-01), Chen
patent: 6933516 (2005-08-01), Xu
patent: 6936840 (2005-08-01), Sun et al.
patent: 6937507 (2005-08-01), Chen
patent: 6992932 (2006-01-01), Cohen
patent: 2004/0248339 (2004-12-01), Lung
patent: 2005/0201182 (2005-09-01), Osada et al.
patent: 2005/0215009 (2005-09-01), Cho
patent: 2006/0110878 (2006-05-01), Lung et al.
patent: 2007/0018149 (2007-01-01), Sato
“Thermal Conductivity of Crystalline Dielectrics” in CRC Handbook of Chemistry and Physics, Internet Version 2007, (87th edition), David R. Lide, ed., Taylor and Francis, Boca Raton FL.
“Thermal Conductivity measurements of Thin Films Silicon Dioxide”, (Proceedings of the IEEE 1989 International conference on Microelectronic test structures, vol. 2 No. 1 Mar. 1989, pp. 121-124).
Adler, David, “Amorphous-Semiconductor Devices,” Sci. Amer., vol. 236, pp. 36-48, May 1977.
Adler, D. et al., “Threshold Switching in Chalcogenide-Glass Thin Films,” J. Appl/Phys 51(6), Jun. 1980, pp. 3289-3309.
Ahn, S.J. et al., “A Highly Manufacturable High Density Phase Change Memory of 64 Mb and Beyond,” IEEE IEDM 2004, pp. 907-910.
Axon Technologies Corporation paper: Technology Description, pp. 1-6.
Bedeschi, F. et al., “4-MB MOSFET-Selected Phase-Change Memory Experimental Chip,” IEEE, 2004, 4 pp.
Blake thesis, “Investigation of GeTeSb5 Chalcogenide Films for Use as an Analog Memory,” AFIT/GE/ENG/00M-04, Mar. 2000, 121 pages.
Chen, AN et al., “Non-Volatile Resistive Switching for Advanced Memory Applications,” IEEE IEDM , Dec. 5-7, 2005, 4 pp.
Cho, S. L. et al., “Highly Scalable On-axis Confined Cell Structure for High Density PRAM beyond 256Mb,” 2005 Symposium on VLSI Technology Digest of Technical Papers, pp. 96-97.
Gill, Manzur et al., “A High-Performance Nonvolatile Memory Technology for Stand-Alone Memory and Embedded Applications,” 2002 IEEE-ISSCC Technical Digest (TD 12.4), 7 pp.
Ha, Y. H. et al. “An Edge Contact Type Cell fro Phase Change RAM Featuring Very Low Power Consumption,” 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 175-176.
Haring Bolivar, P. et al., “Lateral Design for Phase Change Random Access Memory Cells with Low-Current Consumption,” presented at 3rdE*PCOS 04 Symposium in Balzers, Principality of Liechtenstein, Sep. 4-7, 2004, 4 pp.
Horii, H. et al., “A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM,” 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 177-178.
Hwang, Y. N. et al., “Full Integration and Reliability Evaluation of Phase-change RAM Based on 0.24μm-CMOS Technologies,” 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 173-174.
Iwasaki, Hiroko et al., “Completely Erasable Phase Change Optical Disk,” Jpn. J. Appl. Phys., Feb. 1992, pp. 461-465, vol. 31.
Jeong, C. W. et al., “Switching Current Scaling and Reliability Evaluation in PRAM,” IEEE Non-Volatile Semiconductor Memory Workshop, Monterey, CA, 2004, pp. 28-29 and workshop cover sheet.
Kim, Kinam et al., “Reliability Investigations for Manufacturable High Density PRAM,” IEEE 43rdAnnual International Reliability Physics Symposium, San Jose, 2005, pp. 157-162.
Kojima, Rie et al., “Ge-Sn-Sb-Te Phase-change Recording Material Having High Crystallization Speed,” Proceedings of PCOS 2000, pp. 36-41.
Lacita, A. L.; “Electrothermal and Phase-change Dynamics in Chalcogenide-based Memories,” IEEE IEDM 2004, 4 pp.
Lai, Stefan, “Current Status of the Phase Change Memory and Its Future,” IEEE IEDM 2003, pp. 255-258.
Lai, Stephan et al., OUM-A 180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications, IEEE IEDM 2001, pp. 803-806.
Lankhorst, Mar
Haynes Beffel & Wolfeld LLP
Jackson Jerome
Macronix International Co. Ltd.
Valentine Jami M
LandOfFree
Pipe shaped phase change memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Pipe shaped phase change memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pipe shaped phase change memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2771057