Pinned photodiode photodetector with common pixel...

Details Pinned photodiode photodetector with common pixel... Pinned photodiode photodetector with common pixel...

2011-04-12

2011-04-12

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S059000, C438S070000, C438S073000, C438S078000, C257S232000, C257S233000, C257S292000, C257SE27132, C257SE27134, C348S296000, C348S302000, C348S307000, C372S050121, C372S050100, C372S050120, C372S050210

Reissue Patent

active

RE042292

ABSTRACT:
delete-start id="DEL-S-00001" date="20110412" ?A lock in pinned photodiode photodetector includes a plurality of output ports which are sequentially enabled. Each time when the output port is enabled is considered to be a different bin of time. A specified pattern is sent, and the output bins are investigated to look for that pattern. The time when the pattern is received indicates the time of flight.delete-end id="DEL-S-00001" ?insert-start id="INS-S-00001" date="20110412" ?A CMOS active pixel image sensor includes a plurality of pinned photodiode photodetectors that use a common output transistor. In one configuration, the charge from two or more pinned photodiodes may be binned together and applied to the gate of an output transistor.insert-end id="INS-S-00001" ?

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