Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-12-05
2006-12-05
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S461000
Reexamination Certificate
active
07145190
ABSTRACT:
A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped region of a second conductivity type. Each doped region of the first conductivity type is beneath a corresponding trench. Each doped region of the second conductivity type is sandwiched between the corresponding doped region and the substrate of the first conductivity type. No edge of any doped region of the first or second conductivity type extends to the trench corners. A method of fabricating the photo sensor is also provided.
REFERENCES:
patent: 6329679 (2001-12-01), Park
patent: 2005/0062078 (2005-03-01), Han
patent: 2005/0133837 (2005-06-01), Hsu et al.
Chien Ho-Ching
Lin Jeng-Shyan
Tseng Chien-Hsien
Wu Sou-Kuo
Yaung Dun-Nian
Birch & Stewart Kolasch & Birch, LLP
Prenty Mark V.
Taiwan Semiconductor Manufacturing Co. Ltd.
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