Pinned photodiode for a CMOS image sensor and fabricating...

Details Pinned photodiode for a CMOS image sensor and fabricating... Pinned photodiode for a CMOS image sensor and fabricating...

2005-11-22

2005-11-22

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S048000

Reexamination Certificate

active

06967120

ABSTRACT:
A pinned photodiode for a CMOS image sensor and fabricating method thereof is disclosed. The disclosed pinned photodiode can reduce a probability of recombination of excess electrons by forming a second potential well having a center-cross form across a photodiode area. The disclosed pinned photodiode-fabricating method comprises forming a photodiode on a substrate, forming a first potential well between the substrate and the photodiode, and forming a second potential well having a center-cross form across said photodiode, which is positioned more deeply than said first potential well.

REFERENCES:
patent: 5625210 (1997-04-01), Lee et al.
patent: 5903021 (1999-05-01), Lee et al.
patent: 6027955 (2000-02-01), Lee et al.

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