Pinhole-free growth of epitaxial CoSi.sub.2 film on Si(111)

Details Pinhole-free growth of epitaxial CoSi.sub.2 film on Si(111) Pinhole-free growth of epitaxial CoSi.sub.2 film on Si(111)

1988-10-14

1991-04-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437245, 437247, 437175, 357 16, 15662072, H01L 2144

Patent

active

050100378

ABSTRACT:
Pinhole-free epitaxial CoSi.sub.2 films (14') are fabricated on (111)-oriented silicon substrates (10) with a modified solid phase epitaxy technique which utilizes (1) room temperature stoichiometric (1:2) codeposition of Co and Si followed by (2) room temperature deposition of an amorphous silicon capping layer (16), and (3) in situ annealing at a temperature ranging from about 500.degree. to 750.degree. C.

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