Pinched poly fuse

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257SE29001, C257SE21002, C438S601000

Reexamination Certificate

active

07619295

ABSTRACT:
An electrical fuse has a region of a first conductivity type in a continuous type polysilicon of a second conductivity type that is opposite the first conductivity type. In one embodiment of the invention the PN junction between the region and the poly fuse is reverse biased.

REFERENCES:
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patent: 6642601 (2003-11-01), Marshall et al.
patent: 6956277 (2005-10-01), Wu et al.
patent: 7227238 (2007-06-01), Ito, et al.
patent: 2005/0258505 (2005-11-01), Wu et al.
patent: 2006/0065946 (2006-03-01), Mehrad et al.
patent: 2007/0099326 (2007-05-01), Hsu et al.
Holzer, et al., “Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Structures,” Ninth Therminic Workshop, Aix-en-Provence, France, Sep.24-26, 2003, pp. 263-268.

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