Pinch rectifier

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...

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257 15, 257 22, 257 86, H01L 2912

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active

046411747

ABSTRACT:
A high speed semiconductor pinch rectifier attains low forward voltage drop and low reverse leakage current by utilizing depletion region pinch-off of conduction channels in a high-resistivity region. In a preferred form, the pinch rectifier additionally utilizes a Schottky barrier contact so as to facilitate device fabrication.

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J. M. Shannon, "Control of Schottky Barrier Height Using Highly Doped Surface Layers," Solid State Electronics, vol. 19(1976), pp. 537-543.
S. Ashok, et al., "Modification of Schottky Barriers in Silicon by Reactive Ion Etching with NF.sub.3 ", Appl. Phys. Lett., vol. 42(15 Apr. 1983), pp. 687-689.

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