Pin type light-receiving device, opto electronic conversion circ

Details Pin type light-receiving device, opto electronic conversion circ Pin type light-receiving device, opto electronic conversion circ

1996-02-02

1998-01-27

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257458, 257466, 257626, H01L 3100

Patent

active

057125040

ABSTRACT:
A pin type light-receiving device according to the present invention comprises (a) a semiconductor substrate, (b) a first semiconductor layer formed on a semiconductor substrate and doped with an impurity of a first conduction type, (c) a second semiconductor layer formed in a mesa shape on the first semiconductor layer and made of a first semiconductor material without intentionally doping the first semiconductor material with an impurity, (d) a third semiconductor layer formed in a mesa shape on the second semiconductor layer and made of the first semiconductor material doped with an impurity of a second conduction type different from the first conduction type, (e) a first electrode layer formed in ohmic contact on the first semiconductor layer, (f) a second electrode layer formed in ohmic contact on the third semiconductor layer, and (g) a fourth semiconductor layer formed around the first to the third semiconductor layers and made of a second semiconductor material having a band gap energy greater than the first semiconductor material without intentionally doping the second semiconductor material with an impurity. This arrangement can suppress the dark current, based on a reduction of leak current, thereby improving the device characteristics.

REFERENCES:
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patent: 5448099 (1995-09-01), Yano
Andre et al, "High Optical and Electrical Quality GalnAs/InP, GaAs/InP Double Heterostructures for Optoelectronic Integration", Journl of Crystal Growth, vol. 107, Nos. 1/4, 1991, pp. 855-859.
Patent Abstracts of Japan, vol. 017, No. 178 (E-1347), Apr. 7, 1993 & JP-A-04 332178 (Sumitomo Electric Ind Ltd), Nov. 19, 1992, Hiroshi.
Sloan, "Processing and Passivation Techniques for Fabrication of High-Speed InP/InGaAs/InP Mesa Photodetectors", Hewlett-Packard Journal, vol. 40, No. 5, Oct. 1989, pp. 69-75.
Patent Abstracts of Japan, vol. 94, No. 11 & JP-A-06 314813 (Sumitomo Electric Ind Ltd), Nov. 8, 1994, Hiroshi.
Chandrasekhar et al, "An InP/InGaAs p-i-n/HBT Monolithic Transimpedance Photoreceiver", IEEE Photonics Technology Letters, vol. 2, No. 7, Jul. 1990, pp. 505-506.
Yano et al, "Monolithic pin-HEMT Receiver With Internal Equaliser for Long-Wavelength Fibre Optic Communications", Electronic Letters, Mar. 1, 1990, vol. 26, No. 5, pp. 305-307.
Ohnaka et al, "A Low Dark Current InGaAs/InP p-i-n Photodiode With Covered Mesa Structure", IEEE Transactions on Electron Devices, vol. ED-34, No. 2, Feb. 1987, pp. 199-204.
Sloan "Processing and Passivation Techniques for Fabrication of High-Speed InP/InGaAs/InP Mesa Photodetectors", Hewlett Packard Journal, Oct. 1989, pp. 69-75.
Carey et al, "Leakage Current in GaInAs/InP Photodiodes Grown by Omvpe", Journal of Crystal Growth 98, (1989), North-Holland, Amsterdam, pp. 90-97.

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