Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-05-31
2009-11-17
Gurley, Lynne A. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S459000, C257S466000
Reexamination Certificate
active
07619293
ABSTRACT:
In a laser pickup photodetector of an optical disk playback device, the sensitivity to blue light is improved. On a main surface of a semiconductor substrate, a high resistivity epitaxial layer that becomes an i layer of a PIN photodiode (PIN-PD) is formed. On a surface of the epitaxial layer, two trenches are formed, on a surface of one trench an N+region that becomes a cathode region of the PIN-PD is formed, and on a surface of the other trench a P+region that becomes an anode region is formed. When the cathode region and the anode region are set in a reverse bias state, a light receiving semiconductor region that is an i layer between the cathode region and anode region is depleted. The depleted layer expands to a surface of the semiconductor substrate. Accordingly, for blue light having a short wavelength, signal charges can be generated on a surface of the semiconductor substrate and the cathode region can collect the signal charges and extract the charges as a light receiving signal.
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Gurley Lynne A.
Oliff & Berridg,e PLC
Sanyo Electric Co,. Ltd.
Webb Vernon P
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