PIN photodiode structure and fabrication process for...

Details PIN photodiode structure and fabrication process for... PIN photodiode structure and fabrication process for...

2005-03-14

2008-10-21

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S458000, C257S466000

Reexamination Certificate

active

07439599

ABSTRACT:
A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type electrode layer; forming a second type electrode layer on the intrinsic layer; etching the second type electrode layer to define a mesa shaped structure; and depositing a passivation material over the mesa shaped structure.

REFERENCES:
patent: 6774448 (2004-08-01), Lindemann et al.
patent: 2004/0169287 (2004-09-01), Honda

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