Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-07-15
2010-06-08
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S618000, C257S656000, C257SE29336, C257SE31061, C257SE31062, C257SE31087, C257SE31088, C257SE33046
Reexamination Certificate
active
07732886
ABSTRACT:
A PIN photodiode structure includes a substrate, a P-doped region disposed in the substrate, an N-doped region disposed in the substrate, and a first semiconductor material disposed in the substrate and between the P-doped region and the N-doped region.
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Chu Tsan-Chi
Liao Wen-Shiang
Shih Hung-Lin
Tsai Wen-Ching
Hsu Winston
Soward Ida M
United Microelectronics Corp.
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