PIN photodiode having a low leakage current

Details PIN photodiode having a low leakage current PIN photodiode having a low leakage current

1989-01-17

1991-03-12

Jackson, Jr., Jerome

357 16, 357 56, H01L 29205, H01L 3106

Patent

active

049996967

ABSTRACT:
A PIN photodiode having a low leakage current comprises a substrate (10) of indium phosphide (InP) which is n.sup.30 doped and on whose first surface is formed a layer (11) of indium phosphide (InP) which is n.sup.- doped and on which is disposed a MESA structure formed by a layer (b 12) of gallium indium arsenide (InGaAs) which is n.sup.- doped and is moreover constituted by a layer (13, 113, 213) of the p.sup.+ type formed at the surface, at the edges and along the circumference of the MESA structure. The structure further comprises a metallic contact (22) formed on the second surface of the substrate and an ohmic contact (21) formed on a part of the p.sup.+ layer. The invention is characterized in that the n.sup.- doping of the layer of indium phosphide (InP) (11) is chosen to be lower than the n.sup.- doping of the layer of gallium indium arsenide (InGaAs) (12), and in that the ohmic contact (21) is formed on a part (213) of the p.sup.+ zone located in the layer of indium phosphide (InP) (11) along the circumference of the MESA structure.

REFERENCES:
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patent: 4442444 (1984-04-01), Osaka
patent: 4586066 (1986-04-01), McIntyre
patent: 4625226 (1986-11-01), Antell
patent: 4651187 (1987-03-01), Sugimoto et al.
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Hasegawa et al., Int. Conf. Solid State Dev. and Materials Kobe, Japan 1984 pp. 579-582 "InGaAs . . . Current".

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