Batteries: thermoelectric and photoelectric – Photoelectric – Cells
Patent
1987-04-16
1988-11-15
Weisstuch, Aaron
Batteries: thermoelectric and photoelectric
Photoelectric
Cells
357 4, 357 30, 357 88, H01L 3106
Patent
active
047847026
ABSTRACT:
The invention provides a PIN photodiode in which at least one of the P, I, N layers is formed by a composition multi-layer including undoped superimposed layers of amorphous semiconductor and undoped insulator. In one embodiment, the P and N layers are formed by an amorphous multi-layer, with five periods for the P layer and nine periods for the N layer, and the I layer is formed from an amorphous semiconductor.
REFERENCES:
patent: 4278474 (1981-07-01), Blakeslee et al.
patent: 4598164 (1986-07-01), Tiedje et al.
patent: 4642144 (1987-02-01), Tiedje et al.
patent: 4705912 (1987-11-01), Nakashima et al.
patent: 4718947 (1988-01-01), Arya
patent: 4719123 (1988-01-01), Haku et al.
patent: 4721535 (1988-01-01), Itoh et al.
S. Tsuda et al., Jap. J. Appl. Phys., vol. 26, pp. 28-32 (Jan. 1987).
D. A. B. Miller et al., Appl. Phys. Lett., vol. 45, pp. 13-15 (1984).
F. Capasso et al., Appl. Phys. Lett., vol. 45, pp. 1193-1195 (1984).
F. Capasso, Laser Focus, Jul. 1984, pp. 84, 86, 88, 90, 92, 94, 96, 98, 100, 101.
F. Capasso et al., Appl. Phys. Lett., vol. 40, pp. 38-40 (1982).
T. H. Wood et al., Appl. Phys. Lett., vol. 44, pp. 16-18 (1984).
"Thomson-CSF"
Plottel Roland
Weisstuch Aaron
LandOfFree
PIN photodiode formed from an amorphous semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with PIN photodiode formed from an amorphous semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and PIN photodiode formed from an amorphous semiconductor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1101911