Pin photodiode and method of fabrication of the same

Details Pin photodiode and method of fabrication of the same Pin photodiode and method of fabrication of the same

1988-06-06

1989-12-05

Wojciechowicz, Edward J.

357 2, 357 58, H01L 2714

Patent

active

048856223

ABSTRACT:
A PIN photodiode is composed of a lower electrode deposited on a substrate, a photoelectric transducer of PIN construction deposited on the lower electrode, and an upper electrode deposited on the photoelectric transducer. A method of fabricating the PIN photodiode is also disclosed. All of electron-and-hole pairs generated in the photoelectric transducer in response to application of light are biased by the lower and upper electrodes. These electron-and-hole pairs are quickly picked up as a current between the electrodes for detecting the light falling on the PIN photodiode.

REFERENCES:
patent: 3982267 (1976-09-01), Henry
patent: 4476481 (1984-10-01), Iesaka et al.
patent: 4490735 (1984-12-01), Schwaderer
"Hydrogevated Amorphous Silicon PIN Diodes with High Rectification Ratlo", Seki et al., Journal of Non-Crystalline Solids 59 & 60 (1983) 1179-1182.

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