Pin photodiode and integrated circuit including same

Details Pin photodiode and integrated circuit including same Pin photodiode and integrated circuit including same

1978-04-17

1980-01-08

Edlow, Martin H.

357 58, 357 40, 357 19, H01L 2714

Patent

active

041830342

ABSTRACT:
A PIN photodiode structure uses direct side entry into the I region, thus permitting the use of thicker P and N regions with a comparatively thin I region without sacrificing speed and results in more constant spatial distribution upon carrier generation and longer wave length devices with conventional speeds or smaller devices at faster speeds, and may be integrated on the same chip with associated circuits.

REFERENCES:
patent: 3304430 (1967-02-01), Biard
patent: 3366793 (1968-01-01), Svedberg
patent: 3423594 (1969-01-01), Golopin
patent: 3535532 (1970-10-01), Merryman
patent: 3959646 (1976-05-01), deCremoux
Melchior et al., Proceedings of the IEEE, vol. 58, No. 10, Oct. 1970, pp. 1466-1486.
Mathur et al., International Electron Device Meeting, (abstract), Wash., D.C. Oct. 1968.

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