Pin photodetector with mini-mesa contact layer

Details Pin photodetector with mini-mesa contact layer Pin photodetector with mini-mesa contact layer

2004-04-30

2008-12-23

Sohn, Seung C (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C257S186000, C257S452000, C257S458000, C257S466000

Reexamination Certificate

active

07468503

ABSTRACT:
A PIN photodetector includes a first semiconductor contact layer, a semiconductor absorption layer having a larger area than the first semiconductor contact layer, a semiconductor passivation layer positioned between the first semiconductor contact layer and absorption layer, and a second semiconductor contact layer. The semiconductor absorption layer and passivation layers are positioned between the first and second semiconductor contact layers.

REFERENCES:
patent: 4885622 (1989-12-01), Uchiyama et al.
patent: 5448099 (1995-09-01), Yano
patent: 5880489 (1999-03-01), Funaba et al.
patent: 6635908 (2003-10-01), Tanaka et al.
patent: 6756613 (2004-06-01), Yuan
patent: 6774448 (2004-08-01), Lindemann et al.
patent: 6794631 (2004-09-01), Clark
patent: 2005/0029541 (2005-02-01), Ko
patent: 2240874 (1991-08-01), None
patent: WO 97/11494 (1997-03-01), None
patent: WO 01/71820 (2001-09-01), None

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