Pin junction photovoltaic element having an I-type semiconductor

Details Pin junction photovoltaic element having an I-type semiconductor Pin junction photovoltaic element having an I-type semiconductor

1991-11-22

1993-10-12

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136249, 136258, 257 55, 257458, H01L 31075

Patent

active

052521427

ABSTRACT:
A pin junction photovoltaic element having an i-type semiconductor layer formed of a variable band gap semiconductor material, said i-type semiconductor layer being positioned between a p-type semiconductor layer having a band gap wider than that of said i-type semiconductor layer and an n-type semiconductor layer having a band gap wider than that of said i-type semiconductor layer, characterized in that said i-type semiconductor layer contains a first region (a) which is positioned on the side of said p-type semiconductor layer and also has a graded band gap, a second region (b) which is adjacent to said first region (a) and has a graded band gap, and a third region (c) which is positioned on the side of said n-type semiconductor layer and also has a graded band gap; said i-type semiconductor layer having a minimum band gap at the boundary between said first region (a) and said second region (b); the thickness of said first region (a) being less than one-half of the total thickness of said i-type semiconductor layer; and the gradient of the band gap of said third region (c) being greater than that of the band gap of said second region (b).

REFERENCES:
patent: 4542256 (1985-09-01), Wiedeman
patent: 4816082 (1989-03-01), Guha et al.
patent: 5104455 (1992-04-01), Yokota et al.
Solar Cells, Jun.-Jul. 1983, vol. 9, No. 1-2, Carlson, D. E. et al., "Light-Induced Effects In Amorphour Silicon Material and Devices," pp. 19-23.
Journal of Applied Physics, Jul. 15, 1985, vol. 58, No. 2, Hack, M. et al. "Physics of Amorphous Silicon Alloy p-in-n Solar Cells", pp. 997-1020.

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