Pin-hole patch method for implanted dielectric layer

Details Pin-hole patch method for implanted dielectric layer Pin-hole patch method for implanted dielectric layer

1993-03-10

1994-01-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 25, 437 63, 437 24, H01L 21266

Patent

active

052780775

ABSTRACT:
Pin-holes or thin sections in the implanted dielectric layer of a SIMOX device are patched by forming a reverse biasable PN junction within the depth range of or proximate to the dielectric layer. A charge depletion zone forms about the PN junction when the latter is reverse-biased and reinforces or patches weak spots in the implanted dielectric layer such as pin-holes and thin-sections.

REFERENCES:
patent: 4837172 (1989-06-01), Mizuno et al.
patent: 4975126 (1990-12-01), Margail et al.
patent: 5047356 (1991-09-01), Li et al.
patent: 5080730 (1992-01-01), Wittkower
patent: 5143858 (1992-09-01), Tomozane et al.
patent: 5196355 (1993-03-01), Wittkower

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