PIN diode with improved power limiting

Details PIN diode with improved power limiting PIN diode with improved power limiting

2011-01-11

2011-01-11

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

With specified impurity concentration gradient

With high resistivity

C257S623000, C257SE27046

Reexamination Certificate

active

07868428

ABSTRACT:
A PIN diode comprising an N-type substrate comprising a cathode of the PIN diode and having an intrinsic layer disposed upon the N-type substrate and having a top surface a P-type material disposed upon the top surface of the intrinsic layer comprising an anode of the PIN diode and a N-type material disposed over the sidewall of the cathode and over the sidewall and a portion of the top surface of the intrinsic material that is not occupied by the anode, wherein a horizontal gap is defined between the anode and the cathode through the intrinsic material, the gap being variable in width and/or the horizontal gap is less than the thickness of the intrinsic layer.

REFERENCES:
patent: 4999696 (1991-03-01), Gentner et al.
patent: 5268310 (1993-12-01), Goodrich et al.
patent: 5343070 (1994-08-01), Goodrich et al.
patent: 2006/0076589 (2006-04-01), Gao et al.

Affiliated with

Also associated with

Rating

PIN diode with improved power limiting does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with PIN diode with improved power limiting, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and PIN diode with improved power limiting will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2631585