PIN diode switched RF signal attenuator

Details PIN diode switched RF signal attenuator PIN diode switched RF signal attenuator

1985-07-23

1987-03-31

Gensler, Paul

Wave transmission lines and networks

Attenuators

333103, 323354, H03H 724, H01P 122

Patent

active

046546103

ABSTRACT:
A multi-path, ladder-type variable step RF signal attenuator is provided. The ladder network is comprised of a number of asymmetric power splitting elements and PI-pad resistor attenuator elements. The high-speed switching and long life characteristics of PIN diodes are utilized to switch resistive attenuator elements into or out of the ladder network to provide selectable values of signal attenuation.

REFERENCES:
patent: 4138637 (1979-02-01), Weinert
Allen et al., Programmable Attenuator, Wireless World vol. 85, No 1524, Aug. 1979.
Harvey et al., Linear Pin Diode Switched Attenuator, Monitor (Australia)-Proc. IREE, Jan./Feb. 1976, vol. 37, No. 1, pp. 11,12.

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