Pin diode circuit arrangement

Telecommunications – Transmitter and receiver at same station – With transmitter-receiver switching or interaction prevention

Reexamination Certificate

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C455S078000, C455S127100, C455S191300, C455S191200, C455S249100, C324S318000, C324S322000, C324S308000, C330S284000, C330S051000, C333S08100R, C333S103000, C333S262000, C333S101000

Reexamination Certificate

active

06937846

ABSTRACT:
A PIN diode switching system is provided, particularly for the transmission stage of a mobile radio telephone, in which, when the PIN diode switching system is in a reverse-bias state, a PIN diode is isolated from its power supply via a high-impedance switch and is, thus, biased by its self-rectification to a radio-frequency voltage in order to suppress harmonic formation and radio-frequency attenuation.

REFERENCES:
patent: 5440283 (1995-08-01), Nendza
patent: 5565823 (1996-10-01), Fratti
patent: 5634200 (1997-05-01), Kitakubo et al.
patent: 5898911 (1999-04-01), White
patent: 5911116 (1999-06-01), Nosswitz
patent: 5914634 (1999-06-01), Oberhammer
patent: 5923233 (1999-07-01), Jantunen et al.
patent: 6154082 (2000-11-01), Bernard et al.
patent: 6198288 (2001-03-01), Gauss et al.
patent: 6218909 (2001-04-01), Eban
patent: 0 578 160 (1994-01-01), None
Hammes: “RF High Power Switch with Reverse Biased Pin-Diodes” Motorola Technical Developments, Oct. 1, 1994, pp. 32-33.

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