Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2006-05-30
2006-05-30
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S048000, C438S455000, C438S459000, C438S974000
Reexamination Certificate
active
07052927
ABSTRACT:
A PIN detector device (190) is fabricated on a substrate (10). The substrate (10) includes a handle wafer portion (208), an implanted oxide layer (206), a backside contact layer (204) and an active wafer portion (202). The substrate (10) serves as a foundation to increase stability and facilitate handling during fabrication of electrical circuitry (248) on a surface of the active wafer portion (202). After the electrical circuitry fabrication processing is substantially complete, the handle wafer portion (208) and implanted oxide layer (206) are removed to expose the implanted backside contact layer (204).
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F. Foulon, L.Rousseau, L.Babadjian, S.Spirkovitch, A.Brambilla and P.Bergonzo, “A New Technique for the Fabrication of Thin Silicon Radiation Detectors”, pp. 218-220, IEEE Transactions on Nuclear Science, vol. 46, No. 3, Jun. 1999.
Cripe Jerry R.
Fletcher Christopher Lee
Toth Andrew G.
Pham Long
Raytheon Company
Schubert William C.
Vick Karl A.
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