Piezoresistive transducers

Measuring and testing – Specimen stress or strain – or testing by stress or strain... – Specified electrical sensor or system

Reexamination Certificate

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Reexamination Certificate

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06915702

ABSTRACT:
Force detection devices may have high detection precision and may prevent current leakage through a strain gage126to the outside. For example, a force detection block120may include a semiconductor substrate122, a first insulating layer124and a semiconductor layer126(strain gage). The strain gage126preferably includes a site where resistance changes in accordance with the stress acting thereon. The strain gage126preferably constitutes at least a portion of a ridge130projects from the surface of the force detection block120. A force transmission block138may be attached to a top surface of the ridge130. The width of the first insulating layer124is preferably greater than the width of the semiconductor layer126.

REFERENCES:
patent: 4680606 (1987-07-01), Knutti et al.
patent: 4771638 (1988-09-01), Sugiyama et al.
patent: 4833929 (1989-05-01), Omura et al.
patent: 5144843 (1992-09-01), Tamura et al.
patent: 5341688 (1994-08-01), Morikawa et al.
patent: 5773728 (1998-06-01), Tsukada et al.
patent: 6631646 (2003-10-01), Maitland
patent: 8-271363 (1996-10-01), None

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