Piezoresistive transducer

Electrical resistors – Strain gauge type

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338 5, 338 46, 73777, 7386265, 357 26, G01L 122

Patent

active

046059199

ABSTRACT:
An electromechanical transducer is provided, and the process for making it, which utilizes a piezoresistive element or gage which is crystallinally the same as the base or substrate upon which it is supported. The gage of the invention is a force gage, and is derived from its substrate by etching in a series of steps which, ultimately, provide a gage with substantially reduced strain energy requirements, because the volume of the gage may be as small as 3.times.10.sup.10 cubic centimeters of stressed material. In its most preferred form, the element or gage is etched free of its substrate to provide, in effect, a "floating gage." This is achieved by defining the gage in its substrate or in material rigidly bonded to its substrate, etching away immediately adjacent material, and leaving the gage free in space, while supported at each end on the substrate.

REFERENCES:
patent: 3351880 (1967-11-01), Wilner
patent: 3392358 (1968-07-01), Collins
patent: 3444499 (1969-05-01), Lovelace
patent: 3492513 (1970-01-01), Hollander
patent: 3897627 (1975-08-01), Klatskin
patent: 3995247 (1976-11-01), Kurtz
patent: 4047144 (1977-09-01), Wong
patent: 4065970 (1978-01-01), Wilner
patent: 4093933 (1978-06-01), Wilner
patent: 4182937 (1980-01-01), Greenwood
patent: 4408386 (1983-10-01), Takayashiki et al.
"Ethylene Diamino Pyrocatechol-Water Mixture Shows Etching Anomaly in Boron-Doped Silicon"; A. Bohg; Journal of the Electrochemical Society; Feb. 1971, p. 401.
Bretschi, "A Piezoresistive Semiconductor Transducer", Feinwerktechnik & Messtechnik, vol. 83, Oct./Nov. 1975, No. 7, pp. 333-339.

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