Piezoresistive strain sensing device

Details Piezoresistive strain sensing device Piezoresistive strain sensing device

1986-03-12

1988-04-19

James, Andrew J.

357 28, 357 60, H01L 2904, H01L 2910, H01L 2984

Patent

active

047393815

ABSTRACT:
A piezoresistive strain sensing device is comprised of a semiconductor single-crystal substrate, having crystal indices in the (100) phase, and having p-type and n-type diffused resistors formed therein. A diffused resistance gauge is formed of the p-type and n-type resistors. Temperature compensation means are formed adjacent the resistance gauge in the substrate.

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patent: 4510671 (1985-04-01), Kurtz et al.
patent: 4672411 (1987-06-01), Shimizu et al.
Smith "Piezoresistance Effect . . . Silicon" Physical Review, vol. 94, No. 1, Apr. 1, 1954, pp. 42-49.

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