Measuring and testing – Fluid pressure gauge – Diaphragm
Patent
1978-06-29
1980-05-20
Woodiel, Donald O.
Measuring and testing
Fluid pressure gauge
Diaphragm
73727, 73777, 338 2, 338 4, G01L 906
Patent
active
042033276
ABSTRACT:
Each sensor consists of a spinel substrate in the form of a beam or a diaphragm which carries a pattern of a plurality of doped silicon piezoresistive resistors. The latter are formed from layers of doped silicon, each of which layers has been epitaxially grown on a corresponding surface of the spinel substrate. The spinel minimizes the occurrence of leakage currents with respect to the resistors, while cooperating with the silicon to provide a high degree of stress transmission to the resistors. The beam form of sensor is shown as the sensor member of a differential fluid pressure to electric signal transducer, wherein the sensor is deflected and strained in accordance with the differential pressure to be sensed.
REFERENCES:
patent: 3230763 (1966-01-01), Frantzis
patent: 3712143 (1973-01-01), Weaver et al.
patent: 3800264 (1974-03-01), Kurtz et al.
"Spinel May Make MOS Faster Than T.sup.2 L", by R. H. Cushman, Electronic Design News, Jan. 15, 1971, pp. 35-42.
Cullen, "The Preparation and Properties of Chemically Vapor Deposited Silicon on Sapphire and Spinel", Journal of Crystal Growth 9 (1971), pp. 107-125.
Burton Lockwood D.
Honeywell Inc.
Marhoefer Laurence J.
Woodiel Donald O.
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