Piezoresistive semiconductor device suitable for use in a pressu

Details Piezoresistive semiconductor device suitable for use in a pressu Piezoresistive semiconductor device suitable for use in a pressu

1990-09-24

1992-12-15

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

338 2, 338 42, 73727, 73777, 73862632, 257417, 257419, 257622, 257627, H01L 2984, H01L 2996

Patent

active

051722054

ABSTRACT:
A piezoresistive device, in which separation grooves having a cross section defined by four (111) planes and including side walls of a silicon oxide film are formed in a surface area of a semiconductor substrate having a surface of (100) plane, and at least one piezoresistor having an inversed triangular cross section defined by one (100) plane and two (111) planes is formed in the surface area of the semiconductor substrate and is surrounded by the separation grooves for separating the piezoresistor from the semiconductor substrate.

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patent: 4706100 (1987-11-01), Tufte
patent: 4737473 (1988-04-01), Wilner
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patent: 4961833 (1990-10-01), Sakai et al.
patent: 5006487 (1991-04-01), Stokes
Allan, Roger, "New Applications Open Up For Silicon Sensors: A Special Report," Electronics, Nov. 6, 1980, pp. 113-122.

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