Piezoresistive pressure sensor

Details Piezoresistive pressure sensor Piezoresistive pressure sensor

1985-09-09

1987-03-17

Goldberg, E. A.

Electrical resistors

Strain gauge type

Fluid- or gas pressure-actuated

338 5, 29610SG, G01L 122

Patent

active

046511202

ABSTRACT:
A piezoresisitve pressure sensor having a diaphragm of silicon nitride with a stressed resistor under the edge of the diaphragm in a single crystal supporting wafer. The signal is derived from the stress in the silicon where the diaphragm attaches to the edge of the opening etched through the silicon.

REFERENCES:
patent: 3801949 (1974-04-01), Larrabee
patent: 3858150 (1974-12-01), Gurtler et al.
patent: 4127840 (1978-11-01), House
patent: 4203327 (1980-05-01), Singh
patent: 4317126 (1982-02-01), Gragg, Jr.
patent: 4456901 (1984-06-01), Kurtz et al.
patent: 4510671 (1985-04-01), Kurtz et al.
Kim & Wise, "Temperature Sensitivity in Silicon Piezoresistive Pressure Transducers", IEEE Trans. on Elect. Dev., vol. ED 30, No. 7, Jul. 83, pp. 802-810.

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