Piezoresistive device and manufacturing processes of this...

Details Piezoresistive device and manufacturing processes of this... Piezoresistive device and manufacturing processes of this...

2005-08-09

2005-08-09

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Having liquid and vapor etching steps

C438S694000, C438S706000, C438S719000, C438S723000, C438S745000, C438S756000

Reexamination Certificate

active

06927171

ABSTRACT:
This device, which is used to measure pressures or accelerations for example, comprises an isolation layer (32) that holds at least one piezoresistive gauge (29). The side tangents (T) of this gauge essentially make up over 90° angles with the surface (37) of the isolation layer. The device may be created using processes of wet isotropic etching, chemical anisotropic etching or isolation material growth processes.

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patent: 2 207 804 (1989-02-01), None
patent: 2 348 958 (2000-10-01), None
patent: WO 87/04300 (1987-07-01), None

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