Piezoelectric thin-film acoustic wave device and information...

Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices

Reexamination Certificate

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Reexamination Certificate

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07876031

ABSTRACT:
A piezoelectric thin-film acoustic wave device formed of a piezoelectric thin film of AlN on the +C plane and having the polarization strength of not lower than 0.63×10−20F/V and an information processing unit using the same are disclosed. This is the result of the inventors having studied the factors other than the C-axis orientation affecting the electromechanical coupling factor and developing a method of improving the electromechanical coupling factor in view of the occasional fact that the electromechanical coupling factor cannot be improved by improving the C-axis orientation and the electromechanical coupling factor required for the piezoelectric thin-film acoustic wave device is not obtained. In such a case, the receiving sensitivity of the receiving system may be deteriorated and the transmission strength of the transmission system is required to be increased undesirably having an adverse effect on the power saving efforts.

REFERENCES:
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patent: 6218770 (2001-04-01), Ando et al.
patent: 6590336 (2003-07-01), Kadota
patent: 6858969 (2005-02-01), Bi et al.
patent: 2004/0012463 (2004-01-01), Kawakubo et al.
patent: 2004/0135144 (2004-07-01), Yamada et al.
patent: 2004/0227590 (2004-11-01), Larson et al.
patent: 2005072409 (2005-03-01), None
Measurements of the Bulk, C-Axis Electromechanical Coupling Constant As A Function Of AlN Film Quality, Naik et al, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 47, No. 1, Jan. 2000 pp. 292-296.
Office Action issued for the counterpart Japanese Application as of Jun. 29, 2010.

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